Index: trunk/doc/modules/ModulesSDRS.tex
===================================================================
--- trunk/doc/modules/ModulesSDRS.tex	(revision 5369)
+++ trunk/doc/modules/ModulesSDRS.tex	(revision 5377)
@@ -1,3 +1,3 @@
-%%% $Id: ModulesSDRS.tex,v 1.63 2005-10-18 22:16:41 eugene Exp $
+%%% $Id: ModulesSDRS.tex,v 1.64 2005-10-19 03:24:11 eugene Exp $
 \documentclass[panstarrs,spec]{panstarrs}
 
@@ -11,5 +11,5 @@
 \project{Pan-STARRS Image Processing Pipeline}
 \organization{Institute for Astronomy}
-\version{08}
+\version{09}
 \docnumber{PSDC-430-012}
 
@@ -1399,18 +1399,18 @@
 Some images contain a signal caused by thin-film interference in the
 device due to strong emission lines.  The resulting instrumental
-effect consists of a pattern (the fringe pattern) of bright and dark
-bands corresponding to the constructive and destructive interference
-of the emission lines.  In the case that a single emission line causes
-the line structure, the resulting pattern can be described by two
-independent parameters: First, the amplitude of the emission line
-determines the overall amplitude of the pattern.  Second, the
-three-dimensional surface structure of the device determines the shape
-of the pattern.  In a typical situation, the device is not only
-illuminated by the emission line (or lines), but also by a continuum
-spectral source, which contributes to the overall light detected by
-the device without following the fringe pattern.  The relative
-intensities of the continuum background and the fringe pattern depend
-on the device structure (thickness) and on the ratio of the continuum
-and line emission fluxes.  
+effect consists of a pattern (the ``fringe pattern'') of bright and
+dark bands corresponding to the constructive and destructive
+interference of the emission lines.  In the case that a single
+emission line causes the line structure, the resulting pattern can be
+described by two independent parameters: First, the amplitude of the
+emission line determines the overall amplitude of the pattern.
+Second, the three-dimensional surface structure of the device
+determines the shape of the pattern.  In a typical situation, the
+device is illuminated by multiple emission lines, as well as a
+continuum spectral source, which contributes to the overall light
+detected by the device without following the fringe pattern.  The
+relative intensities of the continuum background and the fringe
+pattern depend on the device structure (thickness) and on the ratio of
+the continuum and line emission fluxes. 
 
 A simple approach to the fringe pattern is to subtract a master fringe
@@ -1495,7 +1495,7 @@
 M^{\rm pred}_{i,j} = G_j + S_i
 \]
-where $M^{\rm pred}_{i,j} = \log \mbox{flux}^{\rm pred}_{i,j}$, $G_j =
-\log \mbox{gain}_j$, and $\log \mbox{source}_i = S_i$.  We can then
-write the chi-square which we want to minimize as:
+where $M^{\rm pred}_{i,j} = \log (\mbox{flux}^{\rm pred}_{i,j})$, $G_j
+= \log (\mbox{gain}_j)$, and $S_i = \log (\mbox{source}_i)$.  We can
+then write the chi-square which we want to minimize as:
 \[
 \chi^2 = \sum_{i,j} (M^{\rm obs}_{i,j} - G_j - S_i)^2
